SIMS studies of MOVPE GaN/InGaN scintilator nano-structures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00539244" target="_blank" >RIV/68378271:_____/19:00539244 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
SIMS studies of MOVPE GaN/InGaN scintilator nano-structures
Original language description
Secondary ion mass spectrometry (SIMS) analysis is a powerful tool for determination material composition and impurity concentration at different parts of structure with a several nm resolution and down to 10E16 cm-3 for many elements. We can estimate the thickness of nanostructure layer and exactly measure their periodicity. Optimization of the SIMS technique can improve our results. Measuring the impurity concentration profiles close to surface, we can estimate surface roughness, in our case the V-pits depth. We can measure impurity concentration profiles with high accuracy.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů