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Some properties of very thin Bi2Te3 layers prepared by laser ablation

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F03%3A00105870" target="_blank" >RIV/67985882:_____/03:00105870 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Some properties of very thin Bi2Te3 layers prepared by laser ablation

  • Original language description

    The 60nm thick layers of Bi 2Te3 were prepared by laser ablation in vacuum using the KrF excimer laser. The energy of laser varied from 300 mJ - 680 mJ and the laser energy density from 2 J/cm2 - 10 J/cm2. The substrate temperature varied for different depositions in the inteup.val 20oC - 480oC. The influence of preparation conditions on Hall mobility, concentration of charged carriers and conductivity at room temperature is presented. Information about morphology and composition of prepared layers is given.

  • Czech name

    Některé vlastnosti velmi tenkých Bi2Te3 vrstev připravených laserovou ablací

  • Czech description

    Pomocí laserové ablace s užitím KrF excimerového laseru byly ve vakuu připraveny 60nm tlusté vrstvy Bi 2Te3. Energie laseru se měnila v rozsahu 300mJ-680mJ a hustota energie laserového svazku 2J/cm2?10J/cm2. Teplota substrátu se pro různé vzorky měnila vintervalu 20-480°C. Vliv depozičních podmínek na Hallovu pohyblivost, koncentraci nosičů a vodivost při pokojové teplotě je prezentována. Rovněž tak informace o morfologii a složení připravených vrstev.

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA202%2F02%2F0098" target="_blank" >GA202/02/0098: Study of very thin Bi2Te3 films prepared by laser ablation and their modification by scanning tunneling microscope(STm)</a><br>

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2003

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Proceedings 6th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies - EXMATEC'2002

  • ISBN

    3-527-40436-8

  • ISSN

  • e-ISSN

  • Number of pages

    5

  • Pages from-to

    867-871

  • Publisher name

    WileyVCH Verlag

  • Place of publication

    Weinheim

  • Event location

    Budapest

  • Event date

    May 26, 2002

  • Type of event by nationality

    EUR - Evropská akce

  • UT code for WoS article