Influence of preparation conditions of thin thermoelectric layers on their power factor

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F05%3A00030657" target="_blank" >RIV/67985882:_____/05:00030657 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Influence of preparation conditions of thin thermoelectric layers on their power factor
Original language description
The influence of preparation conditions on the power factor and the dependency of the Seebeck coefficient on conductivity for prepared layers were explored. Layers were prepared by laser ablation from Bi2Te3 target on quartz glass substrates. Thickness of layers changed from 13nm to 400nm, the temperature of the substrate during deposition varied from 300oC to 480oC and density of energy of laser beam from 2J/cm2 to 10J/cm2.
Czech name
Vliv depozičních podmínek na "power factor " (účiník) tenkých termoelektrických vrstev
Czech description
Experiment zkoumal vliv depozičních podmínek na "power factor" a závislost Seebekova koeficientu na vodivost pro tenké vrstvy připravené metodou laserové ablace z Bi2Te3 terče na skleněné substráty. Tloušťka připravených vrstev se měnila od 13nm do 400nm, teplota substrátu během depozice od 300oC to 480oC a hustota laserového svazku od 2J/cm2 to 10J/cm2.

Project
<a href="/en/project/GA202%2F02%2F0098" target="_blank" >GA202/02/0098: Study of very thin Bi2Te3 films prepared by laser ablation and their modification by scanning tunneling microscope(STm)</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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