Characterization of InAs/AlSb tunneling double barrier heterostructure by ballistic electron emission microscope with InAs as based electrode.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F03%3A13030017" target="_blank" >RIV/67985882:_____/03:13030017 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Characterization of InAs/AlSb tunneling double barrier heterostructure by ballistic electron emission microscope with InAs as based electrode.

Original language description

The characterization of InAs/AlSb double tunnel barrier heterostructure with the well thickness of 12nm and symmetric barrier thickness of 2nm by ballistic electron emission microscopy/spectroscopy is presented. For the measurements the top InAs layer ofheterostructure is used as the base electrode.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/KSK1010104" target="_blank" >KSK1010104: Condensed matter physics and materials science</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2003

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physica Status Solidi C

ISSN

1610-1634

e-ISSN

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Volume of the periodical

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Issue of the periodical within the volume

3

Country of publishing house

DE - GERMANY

Number of pages

6

Pages from-to

986-991

UT code for WoS article

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EID of the result in the Scopus database

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