Characterization of InAs/AlSb tunneling double barrier heterostructure by ballistic electron emission microscope with InAs as base electrode
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F03%3A03094779" target="_blank" >RIV/68407700:21230/03:03094779 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Characterization of InAs/AlSb tunneling double barrier heterostructure by ballistic electron emission microscope with InAs as base electrode
Original language description
The characterization of InAs/AlSb double tunnel barrier heterostructure with the well thickness of 12 nm and symmetric barrier thickness of 2 nm by ballistic electron emission microscopy / spectroscopy is presented. For the measurements the top InAs layer of heterostructure is used as the base electrode.
Czech name
—
Czech description
—
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
—
Result continuities
Project
—
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physica Status Solidi (c)
ISSN
1610-1634
e-ISSN
—
Volume of the periodical
Neuveden
Issue of the periodical within the volume
3
Country of publishing house
DE - GERMANY
Number of pages
5
Pages from-to
986-991
UT code for WoS article
—
EID of the result in the Scopus database
—