Pure and intentionally doped indium phosphide wafers treated by long time annealing at high temperatures.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F03%3A13030025" target="_blank" >RIV/67985882:_____/03:13030025 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Pure and intentionally doped indium phosphide wafers treated by long time annealing at high temperatures.

Original language description

InP crystals were grown by Czochralski method from undoped InP melt or doped with Ca, Zn, Fe or Mn or co-doped with Ti and Zn. Crystals were annealed in phosphorus ambient for 95 h at 950 o C and cooled slowly. Conversion to the semi-insulating state wasstudies by Hall measurements and low temperature optical absorption spectroscopy. The undoped samples with electron concentration below 1 x 10 16 cm -3 became semiinsulating due to decreasing content of shallow donors and increasing content of the active Fe.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2003

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Semiconductor Science and Technology

ISSN

0268-1242

e-ISSN

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Volume of the periodical

18

Issue of the periodical within the volume

11

Country of publishing house

GB - UNITED KINGDOM

Number of pages

7

Pages from-to

938-944

UT code for WoS article

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EID of the result in the Scopus database

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