Evaluation of semi-insulating Ti-doped and Mn-doped InP for radiation detection.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F01%3A13010117" target="_blank" >RIV/67985882:_____/01:13010117 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Evaluation of semi-insulating Ti-doped and Mn-doped InP for radiation detection.

Original language description

Undoped InP and doped with Fe, co-doped with Zn and Ti and doped with Mn were grown. Hall measurements and DLTS were used for characterization. Two electron traps were found in undoped InP whose concentration was suppressed in Mn doped InP. Binding energies of Fe, Ti and Mn deep level impurities were determined from temperature dependent Hall measurements. Resistivity of InP:Ti at the lowered temperature 230 K (10 6 .OMEGA.m) and small hole capture rate of Ti makes this material suitable for radiation detection.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2001

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Semiconductor Science and Technology

ISSN

0268-1242

e-ISSN

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Volume of the periodical

16

Issue of the periodical within the volume

12

Country of publishing house

GB - UNITED KINGDOM

Number of pages

6

Pages from-to

1002-1007

UT code for WoS article

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EID of the result in the Scopus database

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