Inversion of conductivity type of III-V compound layers in experiments with LPE growth from rare-earth containing melts

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F09%3A00341232" target="_blank" >RIV/67985882:_____/09:00341232 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Inversion of conductivity type of III-V compound layers in experiments with LPE growth from rare-earth containing melts

Original language description

Rare-earth (RE) elements present in the growth melt of the LPE process are known to have a purifying effect on the grown layers of III-V compounds. The RE atoms exhibit high chemical affinity to shallow donors. The aim of this paper is to simulate the sometimes observed situation where the gradual gettering of donor impurity leads to an inversion of the electrical conductivity type of the grown layer from n to p. Usefulness of the approach is demonstrated by interpreting results of experimental work.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Crystal Research and Technology

ISSN

0232-1300

e-ISSN

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Volume of the periodical

44

Issue of the periodical within the volume

6

Country of publishing house

DE - GERMANY

Number of pages

6

Pages from-to

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UT code for WoS article

000267101200004

EID of the result in the Scopus database

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