Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F11%3A00368040" target="_blank" >RIV/67985882:_____/11:00368040 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1186/1556-276X-6-490" target="_blank" >http://dx.doi.org/10.1186/1556-276X-6-490</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1186/1556-276X-6-490" target="_blank" >10.1186/1556-276X-6-490</a>
Alternative languages
Result language
angličtina
Original language name
Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles
Original language description
Depositions of Pd nanoparticles (NPs) were performed on surfaces of semiconductor wafers of InP and GaN from isooctane colloid solutions with reverse micelles. Diodes were prepared by making Schottky contacts with colloidal graphite on semiconductor surfaces previously deposited with Pd NPs. Large increase of current was observed after exposing voltage biased diodes to flow of hydrogen and nitrogen blend, representing more than two orders-of-magnitude improvement over the best results reported up to now.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/OC10021" target="_blank" >OC10021: Study of metal nanoparticle layers deposited by electrophoresis on semiconductor III-V-N compounds</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nanoscale Research Letters
ISSN
1931-7573
e-ISSN
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Volume of the periodical
6
Issue of the periodical within the volume
490
Country of publishing house
US - UNITED STATES
Number of pages
10
Pages from-to
4901-49010
UT code for WoS article
000296254000002
EID of the result in the Scopus database
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