EPD of Reverse Micelle Pd and Pt Nanoparticles onto InP and GaN for High-Response Hydrogen Sensors
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F12%3A00396586" target="_blank" >RIV/67985882:_____/12:00396586 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.4028/www.scientific.net/KEM.507.169" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/KEM.507.169</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.4028/www.scientific.net/KEM.507.169" target="_blank" >10.4028/www.scientific.net/KEM.507.169</a>
Alternative languages
Result language
angličtina
Original language name
EPD of Reverse Micelle Pd and Pt Nanoparticles onto InP and GaN for High-Response Hydrogen Sensors
Original language description
We investigated properties of nanolayers electrophoretically deposited (EPD) onto semiconductor indium phosphide (InP) or gallium nitride (GaN) single crystals from colloid solutions of metal palladium (Pd), platinum (Pt) or bimetallic Pd/Pt nanoparticles (NPs) in isooctane. Colloids with metal NPs were prepared by reaction of metal compounds with the reducing agent hydrazine in water confined to reverse micelles of surfactant AOT.. Chopped DC electric voltage was applied for the time period to depositmetal NPs, only partly covering surface of the wafer. The deposits were image-observed by scanning electron microscopy (SEM)..Diodes with porous Schottky contacts were made by printing colloidal graphite on the NPs deposited surface and making ohmic contact on the blank side of the wafer. The diodes showed current-voltage characteristics of excellent rectification ratio and barrier height values close to Schottky-Mott limit, which was an evidence of negligible Fermi level pinning. Large
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
ELECTROPHORETIC DEPOSITION: FUNDAMENTALS AND APPLICATIONS IV
ISBN
9783037853795
ISSN
1013-9826
e-ISSN
—
Number of pages
5
Pages from-to
169-173
Publisher name
TRANS TECH PUBLICATIONS LTD
Place of publication
ZURICH
Event location
Puerto Vallarta
Event date
Oct 2, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000308567500027