Nonlinear properties of the dipole layer in MOS-based hydrogen detectors

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F12%3A00387843" target="_blank" >RIV/67985882:_____/12:00387843 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Nonlinear properties of the dipole layer in MOS-based hydrogen detectors

Original language description

Nonlinear dielectric properties of the dipole layer formed at the catalytic metal/insulator interface of MOS-based hydrogen sensors are investigated. A two-valley potential profile is used to model electronic states in adsorbed H atoms and to derive equation expressing dielectric polarization as a function of the applied field. Application of superposed static and alternating fields leads to third harmonic generation. The results could help to design diagnostic experiments for this kind of sensors

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GA102%2F09%2F1037" target="_blank" >GA102/09/1037: Metallic nanolayers for semiconductor sensor and detector structures</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physica status solidi C

ISSN

1610-1642

e-ISSN

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Volume of the periodical

9

Issue of the periodical within the volume

7

Country of publishing house

DE - GERMANY

Number of pages

3

Pages from-to

1687-1689

UT code for WoS article

000306479300047

EID of the result in the Scopus database

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