Detection of hydrogen at room temperature with graphite-Pt nanoparticles/Si Schottky diodes

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F13%3A00426906" target="_blank" >RIV/67985882:_____/13:00426906 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1109/SMICND.2013.6688078" target="_blank" >http://dx.doi.org/10.1109/SMICND.2013.6688078</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/SMICND.2013.6688078" target="_blank" >10.1109/SMICND.2013.6688078</a>

Result language
angličtina
Original language name
Detection of hydrogen at room temperature with graphite-Pt nanoparticles/Si Schottky diodes
Original language description
Hydrogen sensing characteristics of graphite based Schottky diodes fabricated by printing colloidal graphite on bare n-type Si substrates and those partly covered with Pt nanoparticles (NPs) was investigated. Decoration of Si substrates with Pt NPs was performed by electrophoretic deposition. We demonstrate that the post-deposition thermal treatment can extensively influence the morphology of the deposited Pt NPs as well as the sensing properties of graphite-Pt NPs/Si Schottky diodes
Czech name
—
Czech description
—

Project
<a href="/en/project/LD12014" target="_blank" >LD12014: Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors.</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the International Semiconductor Conference 2013, CAS
ISBN
978-1-4673-5670-1
ISSN
1545-827X
e-ISSN
—
Number of pages
4
Pages from-to
23-26
Publisher name
IEEE
Place of publication
New York
Event location
Sinaia
Event date
Oct 14, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000330180800004

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