DEPOSITION OF PVP-PROTECTED PLATINUM NANOPARTICLES ON SEMICONDUCTOR SUBSTRATES FOR HYDROGEN SENSING

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F15%3A00457757" target="_blank" >RIV/67985882:_____/15:00457757 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—

Result language
angličtina
Original language name
DEPOSITION OF PVP-PROTECTED PLATINUM NANOPARTICLES ON SEMICONDUCTOR SUBSTRATES FOR HYDROGEN SENSING
Original language description
High quality Schottky diode hydrogen sensors were prepared by the deposition of colloidal graphite on n-type InP substrates partly covered with PVP-protected Pt nanoparticles (NPs). A sub-monolayer of the Pt NPs was created by simple evaporation of the solvent in which Pt NPs were dispersed. The Pt NPs serve to dissociate hydrogen molecules into atomic hydrogen, which is absorbed at the metal-semiconductor interface. Hydrogen absorption leads to the formation of the dipole layer, which changes the Schottky barrier height and results in the increase of both forward and reverse current. The proposed hydrogen sensor showed high sensitivity response of similar to 10(6) to 1000 ppm H-2 in N-2 at room temperature
Czech name
—
Czech description
—

Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
NANOCON 2014. 6th International conference proceedings
ISBN
978-80-87294-53-6
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
231-234
Publisher name
TANGER
Place of publication
Ostrava
Event location
Brno
Event date
Nov 5, 2014
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000350636300038

Similar results(10)