High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensor

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F11%3A00437407" target="_blank" >RIV/67985882:_____/11:00437407 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensor
Original language description
Hydrogen sensing characteristics of graphite-Pd(Pt)lInP Schottky diodes fabricated by electrophoretic deposition technique were investigated. The proposed hydrogen sensors showed relatively high sensitivity response of 10 6 to 1000 ppm H 2 in N 2. The barrier height reduction due to hydrogen exposure was 0.35 eV and 0.37 eV for Pd and Pt based Schottky diodes respectively. Temperature dependence of the sensitivity, the barrier height variation, the ideality factor and the barrier height itself were studied. Pt based Schottky diodes show better sensitivity and shorter recovery times compared to Pd ones
Czech name
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Czech description
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Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials (CSW/IPRM 2011)
ISBN
978-1-4577-1753-6
ISSN
1092-8669
e-ISSN
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Number of pages
4
Pages from-to
68-71
Publisher name
IEEE
Place of publication
Berlin
Event location
Berlin
Event date
May 22, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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