Study of Schottky Barriers Prepared by Deposition of Colloidal Graphite and Pt Nanoparticles on InP and GaN
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F11%3A00374734" target="_blank" >RIV/67985882:_____/11:00374734 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Study of Schottky Barriers Prepared by Deposition of Colloidal Graphite and Pt Nanoparticles on InP and GaN
Original language description
Schottky barriers were prepared by deposition of colloidal graphite on polished surfaces of InP or GaN single crystals. sparsely covered with Pt nanoparticles deposited electrophoretically. Diodes with the Schottky barriers were studied by current voltage characteristics. The diodes showed high rectification ratio and high Schottky barrier heights indicating negligible Fermi level pinning. By testing with gas consisting of 0.1 % of hydrogen and rest nitrogen, the current showed high sensitivity to hydrogen.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON
ISBN
978-1-4577-0880-0
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
"C651"-"C654"
Publisher name
IEEE
Place of publication
NEW YORK
Event location
Stockholm
Event date
Jun 26, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000297859300068