Hydrogen sensors made on InP or GaN with electrophoretically deposited Pd or Pt nanoparticles

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F12%3A00387579" target="_blank" >RIV/67985882:_____/12:00387579 - isvavai.cz</a>

Alternative codes found

RIV/68407700:21340/12:00369485

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

Hydrogen sensors made on InP or GaN with electrophoretically deposited Pd or Pt nanoparticles

Original language description

High quality Schottky barriers were prepared by applying colloidal graphite on polished wafers of n-type InP or n-type GaN partly covered with palladium or platinum nanoparticles (NPs). The NPs were deposited by electrophoresis from colloid solutions prepared by reverse micelle technique. Schottky diodes showed current-voltage characteristics of high rectification and high barrier. Under the best conditions found heretofore the detection limits of Schottky diodes were below 1 ppm of hydrogen in nitrogen.

Czech name

—

Czech description

—

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

—

Project

<a href="/en/project/OC10021" target="_blank" >OC10021: Study of metal nanoparticle layers deposited by electrophoresis on semiconductor III-V-N compounds</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Acta Physica Polonica. A

ISSN

0587-4246

e-ISSN

—

Volume of the periodical

122

Issue of the periodical within the volume

3

Country of publishing house

PL - POLAND

Number of pages

4

Pages from-to

572-575

UT code for WoS article

—

EID of the result in the Scopus database

—