Highly Textured Seed Layers for the Growth of Vertically Oriented ZnO Nanorods

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F19%3A00499951" target="_blank" >RIV/67985882:_____/19:00499951 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11320/19:10405947
Result on the web
<a href="https://www.mdpi.com/2073-4352/9/11/566" target="_blank" >https://www.mdpi.com/2073-4352/9/11/566</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3390/cryst9110566" target="_blank" >10.3390/cryst9110566</a>

Result language
angličtina
Original language name
Highly Textured Seed Layers for the Growth of Vertically Oriented ZnO Nanorods
Original language description
One dimensional ZnO nanostructures prepared by favorable and simple solution growth methods are at the forefront of this research. Vertically oriented ZnO nanorods with uniform physical properties require high-quality seed layers with a narrow size distribution of the crystallites, strong c-axis orientation, and low surface roughness and porosity. It has been shown that high quality seed layers can be prepared by the sol-gel process. The sol-gel process involves three essential steps: preparation of the sol, its deposition by dip coating, and thermal treatment comprising preheating and annealing. We put emphasis on the investigation of the heat treatment on the properties of the seed layers and on the vertical alignment of the nanorods. It was demonstrated that for the vertical alignment of the nanorods, the preheating step is crucial and that the temperatures reported in the literature have been too low. With higher preheating temperatures, conditions for the vertical alignment of the nanorods were achieved in both investigated annealing atmospheres in air and in argon
Czech name
—
Czech description
—

Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
<a href="/en/project/GA17-00355S" target="_blank" >GA17-00355S: Growth mechanisms of solution-grown one-dimensional semiconductor structures on patterned substrates</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)