Effect of heat treatment on the properties of sol-gel deposited ZnO seed layers
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F18%3A00502967" target="_blank" >RIV/67985882:_____/18:00502967 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Effect of heat treatment on the properties of sol-gel deposited ZnO seed layers
Original language description
Zinc oxide nanorods as a potential material for nanoscale devices are prepared by chemical bath deposition (CBD). The effect of the quality of the sol-gel deposited seed layer on the vertical alignment of the nanorods to a silicon substrate is discussed. Emphasis is put on the investigation of the impact of the heat treatment on the properties of the seed layer deposited by dip-coating. The sol-gel method is a multi-stage process consisting of three principal steps: (i) preparation of a solution with suitable precursors, (ii) deposition of the precursor solution, and (iii) the heat treatment. The preheating needs to be performed to thermally decompose the zinc acetate precursor into zinc oxide seeds. Three different temperatures of preheating are compared (300 degrees C, 350 degrees C, 400 degrees C) followed by annealing in argon at 800 degrees C and the influence on the quality of the seed layers and vertical alignment of nanorods are discussed. When the preheating temperature is higher than 350 degrees C, the seed layer comprises smaller and denser crystallites with a preferential orientation along the c-axis. CBD growth of ZnO nanorods on these seed layers results in their good vertical alignment
Czech name
—
Czech description
—
Classification
Type
D - Article in proceedings
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/GA17-00355S" target="_blank" >GA17-00355S: Growth mechanisms of solution-grown one-dimensional semiconductor structures on patterned substrates</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
9th International Conference on Nanomaterials - Research and Application (NANOCON 2017)
ISBN
978-80-87294-81-9
ISSN
—
e-ISSN
—
Number of pages
6
Pages from-to
128-133
Publisher name
TANGER Ltd
Place of publication
Ostrava
Event location
Brno
Event date
Oct 18, 2017
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000452823300020