Homogeneous Resistive Switching in Individual ZnO Nanorod p-n Junctions

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F19%3A00523535" target="_blank" >RIV/67985882:_____/19:00523535 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1109/SMICND.2019.8923637" target="_blank" >http://dx.doi.org/10.1109/SMICND.2019.8923637</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/SMICND.2019.8923637" target="_blank" >10.1109/SMICND.2019.8923637</a>

Result language
angličtina
Original language name
Homogeneous Resistive Switching in Individual ZnO Nanorod p-n Junctions
Original language description
Electrical properties of a single vertically-oriented n-ZnO nanorod on a p-GaN substrate are investigated by measuring their current-voltage characteristics. The current-voltage characteristics are measured using nanoprobe in the high vacuum chamber of a scanning electron microscope. The observed changes of the resistivity are attributed to the field induced change of the potential barrier at the p-n function interface
Czech name
—
Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019)
ISBN
978-1-7281-1888-8
ISSN
1545-827X
e-ISSN
—
Number of pages
4
Pages from-to
289-292
Publisher name
IEEE
Place of publication
NEW YORK
Event location
Sinaia
Event date
Oct 9, 2019
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000514295300061

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