The improvement of UV photodetection based on polymer/ZnO nanorod heterojunctions

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F20%3A00537850" target="_blank" >RIV/67985882:_____/20:00537850 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.orgel.2019.105545" target="_blank" >https://doi.org/10.1016/j.orgel.2019.105545</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.orgel.2019.105545" target="_blank" >10.1016/j.orgel.2019.105545</a>

Result language
angličtina
Original language name
The improvement of UV photodetection based on polymer/ZnO nanorod heterojunctions
Original language description
We report on the fabrication of rectifying junctions between n-type ZnO nanorods (NRs) and p-type polymer (poly(3,4ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The ZnO NRs are synthesized by a low temperature two-step hydrothermal method on n-type silicon substrate. Scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy and current-voltage (I-V) measurements are employed to study the morphology, charge transport, and device performance of the fabricated structures. Vertically aligned ZnO NRs are covered with a thick polymer layer to form an heterojunction based photodiode. Graphite and Gain eutectic (e-GaIn) are used as ohmic contacts to PEDOT:PPS film and Si substrate, respectively. Basic electrical parameters for e-GaIn/Si/ZnO/PEDOT:PSS/Graphite structure are calculated from the I-V characteristics. These structures also show high sensitivity to UV light illumination with a large degree of reproducibility. Furthermore, we demonstrate that by using the photovoltaic effect, the photodetector can operate as self-powered without consuming external energy
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
<a href="/en/project/GA17-00355S" target="_blank" >GA17-00355S: Growth mechanisms of solution-grown one-dimensional semiconductor structures on patterned substrates</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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