Effect of PEDOT:PSS Layer Deposition on Electrical and Photoelectrical Properties of n(+)-ZnO/n-Si Heterostructure
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F23%3A00571729" target="_blank" >RIV/67985882:_____/23:00571729 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1007/s11664-023-10276-2" target="_blank" >http://dx.doi.org/10.1007/s11664-023-10276-2</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s11664-023-10276-2" target="_blank" >10.1007/s11664-023-10276-2</a>
Alternative languages
Result language
angličtina
Original language name
Effect of PEDOT:PSS Layer Deposition on Electrical and Photoelectrical Properties of n(+)-ZnO/n-Si Heterostructure
Original language description
The results of electrical and photoelectrical characterization of the interface and bulk properties of n(+)-ZnO/n-Si and poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/n(+)-ZnO/n-Si heterostructures are presented. It was found that the PEDOT:PSS layer deposited on the surface of zinc oxide increases the potential barrier at the ZnO/Si interface, leading to higher band bending in the silicon, which is important for solar cell applications. The recombination rate at the interface decreases because of the creation of an inversion layer in the silicon under operational conditions. The increase of the potential barrier in PEDOT:PSS/n(+)-ZnO/n-Si heterostructures results in the increase of the open-circuit voltage by 54-180%. The external quantum efficiency in PEDOT:PSS/n(+)-ZnO/n-Si heterostructures increases by 100% at 450 nm.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20501 - Materials engineering
Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Electronic Materials
ISSN
0361-5235
e-ISSN
1543-186X
Volume of the periodical
52
Issue of the periodical within the volume
5
Country of publishing house
DE - GERMANY
Number of pages
9
Pages from-to
3112-3120
UT code for WoS article
000934300100002
EID of the result in the Scopus database
2-s2.0-85148248552