Fabrication and characterization of n-type zinc oxide/p-type boron doped diamond heterojunction
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00454645" target="_blank" >RIV/68378271:_____/15:00454645 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.2478/jee-2015-0045" target="_blank" >http://dx.doi.org/10.2478/jee-2015-0045</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.2478/jee-2015-0045" target="_blank" >10.2478/jee-2015-0045</a>
Alternative languages
Result language
angličtina
Original language name
Fabrication and characterization of n-type zinc oxide/p-type boron doped diamond heterojunction
Original language description
In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVDmethod with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed.
Czech name
—
Czech description
—
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
—
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Electrical Engineering - Elektrotechnický časopis
ISSN
1335-3632
e-ISSN
—
Volume of the periodical
66
Issue of the periodical within the volume
5
Country of publishing house
SK - SLOVAKIA
Number of pages
5
Pages from-to
277-281
UT code for WoS article
000365830700006
EID of the result in the Scopus database
2-s2.0-84945188174