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Fabrication and characterization of n-type zinc oxide/p-type boron doped diamond heterojunction

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00454645" target="_blank" >RIV/68378271:_____/15:00454645 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.2478/jee-2015-0045" target="_blank" >http://dx.doi.org/10.2478/jee-2015-0045</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.2478/jee-2015-0045" target="_blank" >10.2478/jee-2015-0045</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Fabrication and characterization of n-type zinc oxide/p-type boron doped diamond heterojunction

  • Original language description

    In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVDmethod with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2015

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Electrical Engineering - Elektrotechnický časopis

  • ISSN

    1335-3632

  • e-ISSN

  • Volume of the periodical

    66

  • Issue of the periodical within the volume

    5

  • Country of publishing house

    SK - SLOVAKIA

  • Number of pages

    5

  • Pages from-to

    277-281

  • UT code for WoS article

    000365830700006

  • EID of the result in the Scopus database

    2-s2.0-84945188174