High temperature PIN diodes based on amorphous hydrogenated silicon carbide and boron-doped diamond thin films

Result code in IS VaVaI

RIV/68378271:_____/19:00522073 - isvavai.cz

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

High temperature PIN diodes based on amorphous hydrogenated silicon carbide and boron-doped diamond thin films

Original language description

The novel a-SiC:H diode structures on transparent conductive boron-doped diamond (BDD), have been deposited by the PECVD. The future of in-situ integration of nanoparticles and quantum dots in thin film structures for optoelectronic applications requires deposition temperatures above 400C. On the boron-doped diamond were deposited thin film PIN structure on the base of a-SiC:H. The layers have been studied by the SEM, temperature resolved electrical conductivity, optical absorptance, photocurrent and PL spectroscopy. The BDD/a-SiC:H diodes have been characterized by I-V measurement and by EL spectroscopyn

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2019

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů