Optoelectronic properties of thin film amorphous hydrogenated silicon carbide diodes deposited on transparent boron-doped diamond

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00521853" target="_blank" >RIV/68378271:_____/19:00521853 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Optoelectronic properties of thin film amorphous hydrogenated silicon carbide diodes deposited on transparent boron-doped diamond

Original language description

We developed thin film diode structures based on thin film a-SiC:H prepared by plasma enhanced chemical vapor deposition at a relatively high temperature on transparent conductive boron-doped diamond (BDD) with an underlying Ti grid. The optical absorption of the BDD/Ti electrode is about 10% in a broad spectral range and the sheet resistivity about 100 /sq. The diodes have been characterized by photocurrent, photoluminescence, Raman and electroluminescence spectroscopy, as well as optical absorption spectroscopy in the visible, near infrared and mid infrared regions. Diodes show a relatively high optical transparency in the near infrared region, a dark current rectifying ratio of more than 4 orders at ±1.5 V, short photocurrent density 15 mA/cm2 and an energy conversion efficiency of 4%.

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2019

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů