Photothermal and photocurrent spectroscopy of wide band gap nanocrystalline semiconductors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00375053" target="_blank" >RIV/68378271:_____/11:00375053 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Photothermal and photocurrent spectroscopy of wide band gap nanocrystalline semiconductors
Original language description
Optical spectroscopy belongs to the most important methods applied to characterize thin films. Photothermal deflection spectroscopy (PDS) as well as the dual beam photocurrent (DBP) spectroscopy in near ultraviolet (200-400 nm), visible (400-700 nm) andnear infrared regions (700-2000 nm) are particularly useful for study of the wide band gap semiconductors deposited as thin layers on glass substrates. In our laboratory we focus on optically transparent thin films such as nanocrystalline diamond (NCD) or ZnO nanostructures with size too small to be visualized in optical microscope and the optical absorption edge in the ultraviolet region. In this contribution we summarize how to evaluate the optical absorption edge and the defects in the band gap of these wide band gap nanocrystalline semiconductors.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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