High-temperature PIN diodes based on amorphous hydrogenated silicon-carbon alloys and boron-doped diamond thin films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00536230" target="_blank" >RIV/68378271:_____/20:00536230 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1002/pssb.201900247" target="_blank" >https://doi.org/10.1002/pssb.201900247</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssb.201900247" target="_blank" >10.1002/pssb.201900247</a>
Alternative languages
Result language
angličtina
Original language name
High-temperature PIN diodes based on amorphous hydrogenated silicon-carbon alloys and boron-doped diamond thin films
Original language description
a-SiC:H diode structures with different ratios of Si:C on transparent conductive boron-doped diamond coated fused silica substrates, have been deposited by plasma enhanced chemical vapour deposition. Boron-doped diamond thin films were deposited at temperature 720 °C on fused silica substrates with a Ti grid used to enhance electrical conductivity. a-SiC:H PIN diodes have been characterised by current-voltage measurements under AM1.5 illumination. For comparison, we deposited the same PIN structures on fluorine-doped tin oxide. Before deposition of the diode structures the surface morphology was studied by scanning electron microscopy, undoped layers deposited on the quartz substrates have been characterised by temperature resolved electrical resistivity, optical absorptance, Raman spectroscopy and photoluminescence.n
Czech name
—
Czech description
—
Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physica Status Solidi B-Basic Solid State Physics
ISSN
0370-1972
e-ISSN
—
Volume of the periodical
257
Issue of the periodical within the volume
6
Country of publishing house
DE - GERMANY
Number of pages
6
Pages from-to
1-6
UT code for WoS article
000527079000001
EID of the result in the Scopus database
2-s2.0-85083660309