Spontaneous formation of monocrystalline nanostripes in the molecular beam epitaxy of antimony triselenide
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F24%3A00599979" target="_blank" >RIV/67985882:_____/24:00599979 - isvavai.cz</a>
Result on the web
<a href="https://pubs.rsc.org/en/content/articlelanding/2024/nr/d4nr02102a/unauth" target="_blank" >https://pubs.rsc.org/en/content/articlelanding/2024/nr/d4nr02102a/unauth</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1039/d4nr02102a" target="_blank" >10.1039/d4nr02102a</a>
Alternative languages
Result language
angličtina
Original language name
Spontaneous formation of monocrystalline nanostripes in the molecular beam epitaxy of antimony triselenide
Original language description
Self-assembled, highly anisotropic nanostructures are spontaneously formed in the molecular beam epitaxy of antimony triselenide on GaAs substrates. These one-dimensional (1D) nanostripes have all the orientations parallel to the substrate surface and preserve the epitaxial relationship with the substrate. The shape of the nanostripes is directly related to the highly anisotropic stibnite structure of antimony triselenide which consists of 1D ribbons held together by weak van der Waals forces. The fabrication of well-ordered arrays of horizontal nanostripes aligned in directions defined by the orientation of the substrate may contribute significantly to the development of electronic circuits and networks composed of interconnected nanostructures leading to applications in neuromorphic devices, gas sensors and polarization-sensitive photodetectors.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
<a href="/en/project/GF23-07585K" target="_blank" >GF23-07585K: Heterostructures of ZnO/(Al,Ga)N Nanowires for Optoelectronics</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nanoscale
ISSN
2040-3364
e-ISSN
2040-3372
Volume of the periodical
16
Issue of the periodical within the volume
41
Country of publishing house
GB - UNITED KINGDOM
Number of pages
8
Pages from-to
19477-19484
UT code for WoS article
001322730400001
EID of the result in the Scopus database
2-s2.0-85205903423