Plasmonic modification of epitaxial nanostructures for the development of a highly efficient SERS platform

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00579613" target="_blank" >RIV/68378271:_____/23:00579613 - isvavai.cz</a>
Alternative codes found
RIV/61989592:15310/23:73621449
Result on the web
<a href="https://hdl.handle.net/11104/0348428" target="_blank" >https://hdl.handle.net/11104/0348428</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3390/cryst13111539" target="_blank" >10.3390/cryst13111539</a>

Result language
angličtina
Original language name
Plasmonic modification of epitaxial nanostructures for the development of a highly efficient SERS platform
Original language description
Epitaxy is the process of crystallization of monocrystalline layers and nanostructures on a crystalline substrate. It allows for the crystallization of various semiconductor layers on a finite quantity of semiconductor substrates, like GaAs, InP, GaP, InGaP, GaP, and many others. The growth of epitaxial heterostructures is very complicated and requires special conditions and the precise control of the growth temperature, the pressure in the reactor, and the flow of the precursors. It is used to grow epitaxial structures in lasers, diodes, detectors, photovoltaic structures, and so on.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10306 - Optics (including laser optics and quantum optics)

Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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