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Epitaxial Ge-crystal arrays for X-ray detection

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14740%2F14%3A00075286" target="_blank" >RIV/00216224:14740/14:00075286 - isvavai.cz</a>

  • Result on the web

    <a href="http://iopscience.iop.org/1748-0221/9/03/C03019" target="_blank" >http://iopscience.iop.org/1748-0221/9/03/C03019</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1088/1748-0221/9/03/C03019" target="_blank" >10.1088/1748-0221/9/03/C03019</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Epitaxial Ge-crystal arrays for X-ray detection

  • Original language description

    Monolithic integration of an X-ray absorber layer on a Si CMOS chip might be a potentially attractive way to improve detector performance at acceptable costs. In practice this requires, however, the epitaxial growth of highly mismatched layers on a Si-substrate, both in terms of lattice parameters and thermal expansion coefficients. The generation of extended crystal defects, wafer bowing and layer cracking have so far made it impossible to put the simple concept into practice. Here we present a way inwhich the difficulties of fabricating very thick, defect-free epitaxial layers may be overcome. It consists of an array of densely packed, three-dimensional Ge-crystals on a patterned Si(001) substrate. The finite gap between neighboring micron-sized crystals prevents layer cracking and substrate bowing, while extended defects are driven to the crystal sidewalls. We show that the Ge-crystals are indeed defect-free, despite the lattice misfit of 4.2%.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2014

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Instrumentation

  • ISSN

    1748-0221

  • e-ISSN

  • Volume of the periodical

    9

  • Issue of the periodical within the volume

    March 2014

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    10

  • Pages from-to

    "C03019"

  • UT code for WoS article

    000336123200019

  • EID of the result in the Scopus database