Epitaxial Ge-crystal arrays for X-ray detection
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14740%2F14%3A00075286" target="_blank" >RIV/00216224:14740/14:00075286 - isvavai.cz</a>
Result on the web
<a href="http://iopscience.iop.org/1748-0221/9/03/C03019" target="_blank" >http://iopscience.iop.org/1748-0221/9/03/C03019</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1748-0221/9/03/C03019" target="_blank" >10.1088/1748-0221/9/03/C03019</a>
Alternative languages
Result language
angličtina
Original language name
Epitaxial Ge-crystal arrays for X-ray detection
Original language description
Monolithic integration of an X-ray absorber layer on a Si CMOS chip might be a potentially attractive way to improve detector performance at acceptable costs. In practice this requires, however, the epitaxial growth of highly mismatched layers on a Si-substrate, both in terms of lattice parameters and thermal expansion coefficients. The generation of extended crystal defects, wafer bowing and layer cracking have so far made it impossible to put the simple concept into practice. Here we present a way inwhich the difficulties of fabricating very thick, defect-free epitaxial layers may be overcome. It consists of an array of densely packed, three-dimensional Ge-crystals on a patterned Si(001) substrate. The finite gap between neighboring micron-sized crystals prevents layer cracking and substrate bowing, while extended defects are driven to the crystal sidewalls. We show that the Ge-crystals are indeed defect-free, despite the lattice misfit of 4.2%.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Instrumentation
ISSN
1748-0221
e-ISSN
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Volume of the periodical
9
Issue of the periodical within the volume
March 2014
Country of publishing house
GB - UNITED KINGDOM
Number of pages
10
Pages from-to
"C03019"
UT code for WoS article
000336123200019
EID of the result in the Scopus database
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