Three-dimensional Epitaxial Si1-xGex, Ge and SiC Crystals on Deeply Patterned Si Substrates

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14740%2F14%3A00089052" target="_blank" >RIV/00216224:14740/14:00089052 - isvavai.cz</a>
Result on the web
<a href="http://ma.ecsdl.org/content/MA2014-02/35/1822.abstract" target="_blank" >http://ma.ecsdl.org/content/MA2014-02/35/1822.abstract</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1149/06406.0631ecst" target="_blank" >10.1149/06406.0631ecst</a>

Result language
angličtina
Original language name
Three-dimensional Epitaxial Si1-xGex, Ge and SiC Crystals on Deeply Patterned Si Substrates
Original language description
We have recently demonstrated for the example of Ge/Si(001) that crystal defects, wafer bowing can be avoided by combining deep substrate patterning, resulting in dense arrays of highly perfect three-dimensional epitaxial crystals. Here we discuss the extension of the method to layer/substrate combinations with lattice misfits ranging from zero for pure Si/Si(001) up to 20% for 3C-SiC/Si(001).
Czech name
—
Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES
ISBN
9781607685432
ISSN
1938-5862
e-ISSN
—
Number of pages
18
Pages from-to
631-648
Publisher name
Electrochemical Society Inc.
Place of publication
Pennington
Event location
Cancun, Mexico
Event date
Oct 5, 2014
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000356773400061

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