X-Ray Nano-Diffraction on Epitaxial Crystals

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14740%2F14%3A00075287" target="_blank" >RIV/00216224:14740/14:00075287 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1166/qm.2014.1127" target="_blank" >http://dx.doi.org/10.1166/qm.2014.1127</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1166/qm.2014.1127" target="_blank" >10.1166/qm.2014.1127</a>

Result language

angličtina

Original language name

X-Ray Nano-Diffraction on Epitaxial Crystals

Original language description

The concept of growing epitaxial Ge and SiGe crystals onto tall Si pillars may provide a means for solving the problems associated with lattice parameter and thermal expansion coefficient mismatch, i.e., dislocations, wafer bowing and cracks. For carefully tuned epitaxial growth conditions the lateral expansion of crystals stops once nearest neighbors get sufficiently close. We have carried out scanning nano-diffraction experiments at the ID01 beam-line of the European Synchrotron Radiation Facility (ESRF) in Grenoble on the resulting space-filling arrays of micron-sized crystals to assess their structural properties and crystal quality. Elastic relaxation of the thermal strain causes lattice bending close to the Si interface, while the dislocation network is responsible for minute tilts of the crystals as a whole. To exclude any interference from nearest neighbors, individual Ge crystals were isolated first by chemical etching followed by micro-manipulation inside a scanning electron

Czech name

—

Czech description

—

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

—

Project

<a href="/en/project/ED1.1.00%2F02.0068" target="_blank" >ED1.1.00/02.0068: Central european institute of technology</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2014

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Quantum Matter

ISSN

2164-7615

e-ISSN

—

Volume of the periodical

3

Issue of the periodical within the volume

4

Country of publishing house

US - UNITED STATES

Number of pages

7

Pages from-to

290-296

UT code for WoS article

—

EID of the result in the Scopus database

—