Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14740%2F16%3A00089936" target="_blank" >RIV/00216224:14740/16:00089936 - isvavai.cz</a>
Result on the web
<a href="http://journals.iucr.org/j/issues/2016/03/00/rg5104/index.html" target="_blank" >http://journals.iucr.org/j/issues/2016/03/00/rg5104/index.html</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1107/S1600576716006397" target="_blank" >10.1107/S1600576716006397</a>

Result language
angličtina
Original language name
Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling
Original language description
Extending the functionality of ubiquitous Si-based microelectronic devices often requires combining materials with different lattice parameters and thermal expansion coefficients. In this paper, scanning X-ray nanodiffraction is used to map the lattice bending produced by thermal strain relaxation in heteroepitaxial Ge microcrystals of various heights grown on high aspect ratio Si pillars. The local crystal lattice tilt and curvature are obtained from experimental three-dimensional reciprocal space maps and compared with diffraction patterns simulated by means of the finite element method. The simulations are in good agreement with the experimental data for various positions of the focused X-ray beam inside a Ge microcrystal. Both experiment and simulations reveal that the crystal lattice bending induced by thermal strain relaxation vanishes with increasing Ge crystal height.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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