X-ray rocking curve imaging on large arrays of extremely tall SiGe microcrystals epitaxial on Si
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F21%3A00122453" target="_blank" >RIV/00216224:14310/21:00122453 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1107/S1600576721004969" target="_blank" >https://doi.org/10.1107/S1600576721004969</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1107/S1600576721004969" target="_blank" >10.1107/S1600576721004969</a>
Alternative languages
Result language
angličtina
Original language name
X-ray rocking curve imaging on large arrays of extremely tall SiGe microcrystals epitaxial on Si
Original language description
This work investigates layers of densely spaced SiGe microcrystals epitaxially formed on patterned Si and grown up to extreme heights of 40 and 100 mm using the rocking curve imaging technique with standard laboratory equipment and a 2D X-ray pixel detector. As the crystalline tilt varied both within the epitaxial SiGe layers and inside the individual microcrystals, it was possible to obtain real-space 2D maps of the local lattice bending and distortion across the complete SiGe surface. These X-ray maps, showing the variation of crystalline quality along the sample surface, were compared with optical and scanning electron microscopy images. Knowing the distribution of the X-ray diffraction peak intensity, peak position and peak width immediately yields the crystal lattice bending locally present in the samples as a result of the thermal processes arising during the growth. The results found here by a macroscopic-scale imaging technique reveal that the array of large microcrystals, which tend to fuse at a certain height, forms domains limited by cracks during cooling after the growth. The domains are characterized by uniform lattice bending and their boundaries are observed as higher distortion of the crystal structure. The effect of concave thermal lattice bending inside the microcrystal array is in excellent agreement with the results previously presented on a microscopic scale using scanning nanodiffraction.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/LQ1601" target="_blank" >LQ1601: CEITEC 2020</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Crystallography
ISSN
0021-8898
e-ISSN
1600-5767
Volume of the periodical
54
Issue of the periodical within the volume
August
Country of publishing house
GB - UNITED KINGDOM
Number of pages
10
Pages from-to
1071-1080
UT code for WoS article
000683118400005
EID of the result in the Scopus database
2-s2.0-85120942350