Development of New Sustainable Near-UV Photodetector Devices Based on Polymer/ZnO NR Heterojunctions With Improved Responsivity
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F25%3A00605602" target="_blank" >RIV/67985882:_____/25:00605602 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1109/TED.2024.3520547" target="_blank" >https://doi.org/10.1109/TED.2024.3520547</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/TED.2024.3520547" target="_blank" >10.1109/TED.2024.3520547</a>
Alternative languages
Result language
angličtina
Original language name
Development of New Sustainable Near-UV Photodetector Devices Based on Polymer/ZnO NR Heterojunctions With Improved Responsivity
Original language description
This article presents a convenient method for fabricating hybrid heterojunctions using poly (N-vinylcarbazole) (PVK) and a 1-D zinc oxide nanorod (ZnO NR) array for photodetector (PD) development. In this context, PVK and ZnO NRs were employed as electron donor and acceptor, respectively. First, ZnO NRs were hydrothermally synthesized through a two-step procedure at low temperatures on an n-type silicon substrate. Ohmic contacts were integrated by incorporating graphite and eutectic In-Ga (eGaIn) in to the PVK film and Si substrate, respectively. The eGaIn/Si/ZnO NRs/PVK/graphite PD structures' fundamental electrical parameters were extracted from the I-V response in dark and under illumination conditions. It was found that the device displayed remarkable sensitivity to ultraviolet (UV) light exposure, owing to a responsivity of 35 mAW-1, with notable reproducibility. What is more, the structure demonstrates an open-circuit voltage, shortcircuit current density, and ideality factor of 0.28 V, 237.2 mu Acm(-2), and 2.3, respectively. The origin of the ZnO/PVK photoconductive properties is explained using the carrier transport mechanism at the interfaces. Moreover, the photoelectrical parameters of the PVK/ZnO NR structure were precisely evaluated through a combined physical- mathematical-numerical approach to unravel the physical mechanisms governing the operation of such PDs. The results of this research reveal promising avenues for flexible and highly sensitive PDs, opening wide potential applications in advanced communication systems, and/or environmental monitoring
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
IEEE Transactions on Electron Devices
ISSN
0018-9383
e-ISSN
1557-9646
Volume of the periodical
72
Issue of the periodical within the volume
2
Country of publishing house
TN - TUNISIA
Number of pages
6
Pages from-to
755-760
UT code for WoS article
001389652400001
EID of the result in the Scopus database
2-s2.0-85216101744