Rare earth elements in semiconductors technology - Part I.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F99%3A13000045" target="_blank" >RIV/67985882:_____/99:13000045 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Rare earth elements in semiconductors technology - Part I.

Original language description

This paper provides a review of the effect of the presence of some REE on the growth process and properties of InP-based compounds with aim of employing the peculiarities of the electron shell as well as high chemical reactivity of the REE to prepare materials of superior quality for applications. The impact of various REE elements is compared.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GA102%2F99%2F0341" target="_blank" >GA102/99/0341: Effect of rare-earth elements on preparation and properties of semiconductor AIIIBV materials</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

1999

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Proceedings of Advanced Materials and Devices for Optoelectronics.

ISSN

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e-ISSN

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Volume of the periodical

7

Issue of the periodical within the volume

2

Country of publishing house

CN - CHINA

Number of pages

4

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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