Characterization of polarizing semiconductor radiation detectors by laser-induced transient currents
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F17%3A00495539" target="_blank" >RIV/68081723:_____/17:00495539 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11320/17:10369827
Result on the web
<a href="http://dx.doi.org/10.1063/1.4997404" target="_blank" >http://dx.doi.org/10.1063/1.4997404</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4997404" target="_blank" >10.1063/1.4997404</a>
Alternative languages
Result language
angličtina
Original language name
Characterization of polarizing semiconductor radiation detectors by laser-induced transient currents
Original language description
A method is presented for the determination of the carrier drift mobility, lifetime, electric field distribution, and the dynamics of space charge formation, including the detrapping energy and capture cross-section of the dominant trap level in polarizing semiconductor radiation detectors. The procedure stems from the laser-induced transient current measurements done at a steady-state and pulsed biasing and at variable temperature. The approach allows us the direct determination of detector parameters from measured data without a complex mathematical treatment. The detrimental effect of surface carrier recombination often hampering the evaluation of detector properties is eliminated. Lifetime worsening caused by the space charge formation is included. The usefulness of the procedure is demonstrated on a CdTe radiation detector. Published by AIP Publishing.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Physics Letters
ISSN
0003-6951
e-ISSN
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Volume of the periodical
111
Issue of the periodical within the volume
8
Country of publishing house
US - UNITED STATES
Number of pages
5
Pages from-to
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UT code for WoS article
000408570000013
EID of the result in the Scopus database
2-s2.0-85028539418