Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F19%3A00506256" target="_blank" >RIV/68081723:_____/19:00506256 - isvavai.cz</a>

Result on the web

<a href="http://orca.cf.ac.uk/120129/1/Wallis%20D%20-%20Investigation%20of%20stacking%20faults%20in%20MOVPE-grown%20....pdf" target="_blank" >http://orca.cf.ac.uk/120129/1/Wallis%20D%20-%20Investigation%20of%20stacking%20faults%20in%20MOVPE-grown%20....pdf</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.5082846" target="_blank" >10.1063/1.5082846</a>

Result language

angličtina

Original language name

Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM

Original language description

X-ray diffraction and bright-field transmission electron microscopy are used to investigate the distribution and density of {111}-type stacking faults (SFs) present in a heteroepitaxial zincblende GaN epilayer with high phase purity, grown on a 3C-SiC/Si (001) substrate by metalorganic vapour-phase epitaxy. It is found that the 4 degrees miscut towards the [110] direction of the substrate, which prevents the formation of undesirable antiphase domains, has a profound effect on the relative densities of SFs occurring on the different {111} planes. The two orientations of SFs in the [-110] zone, where the SF inclination angle with the GaN/SiC interface is altered by the 4 miscut, show a significant difference in density, with the steeper (111) SFs being more numerous than the shallower (-1-11) SFs by a factor of similar to 5 at 380 nm from the GaN/SiC interface. In contrast, the two orientations of SFs in the [110] zone, which is unaffected by the miscut, have densities comparable with the (-1-11) SFs in the [-110] zone. A simple model, simulating the propagation and annihilation of SFs in zincblende GaN epilayers, reproduces the presence of local SF bunches observed in TEM data. The model also verifies that a difference in the starting density at the GaN/SiC interface of the two orientations of intersecting {111} SFs in the same zone reduces the efficiency of SF annihilation. Hence, (111) SFs have a higher density compared with SFs on the other three {111} planes, due to their preferential formation at the GaN/SiC interface caused by the miscut.

Czech name

—

Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

20201 - Electrical and electronic engineering

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2019

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

—

Volume of the periodical

125

Issue of the periodical within the volume

10

Country of publishing house

US - UNITED STATES

Number of pages

8

Pages from-to

105303

UT code for WoS article

000461370200024

EID of the result in the Scopus database

2-s2.0-85062849811