Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F19%3A00509851" target="_blank" >RIV/68081723:_____/19:00509851 - isvavai.cz</a>

Result on the web

<a href="https://www.sciencedirect.com/science/article/pii/S0022024819303823?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0022024819303823?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2019.125167" target="_blank" >10.1016/j.jcrysgro.2019.125167</a>

Result language

angličtina

Original language name

Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates

Original language description

Cubic zincblende (zb-)GaN nucleation layers (NLs) grown by MOVPE on 3C-SiC/Si substrates were studied to determine their optimal thickness for subsequent zb-GaN epilayer growth. The layers were characterised by atomic force microscopy, X-ray diffraction and scanning transmission electron microscopy. The as-grown NLs, with nominal thicknesses varying from 3nm to 44nm, consist of small grains which are elongated in the [1−10] direction, and cover the underlying SiC surface almost entirely. Thermal annealing of the NLs by heating in a H2/NH3 atmosphere to the elevated epilayer growth temperature reduces the substrate coverage of the films that are less than 22nm thick, due to both material desorption and the ripening of islands. The compressive biaxial in-plane strain of the NLs reduces with increasing NL thickness to the value of relaxed GaN for a thickness of 44nm. Both the as-grown and annealed NLs are crystalline and have high zincblende phase purity, but contain defects including misfit dislocations and stacking faults. The zb-GaN epilayers grown on the thinnest NLs show an enhanced fraction of the wurtzite phase, most likely formed by nucleation on the exposed substrate surface at elevated temperature, thus dictating the minimum NL thickness for phase-pure zb-GaN epilayer growth.n

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

20201 - Electrical and electronic engineering

Project

<a href="/en/project/EF16_027%2F0008056" target="_blank" >EF16_027/0008056: International mobility of junior researchers of IPM</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2019

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

—

Volume of the periodical

524

Issue of the periodical within the volume

OCT

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

8

Pages from-to

125167

UT code for WoS article

000480523700011

EID of the result in the Scopus database

2-s2.0-85073701641