Defect structures in (001) zincblende GaN/3C-SiC nucleation layers
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F21%3A00541992" target="_blank" >RIV/68081723:_____/21:00541992 - isvavai.cz</a>
Result on the web
<a href="https://aip.scitation.org/doi/10.1063/5.0036366" target="_blank" >https://aip.scitation.org/doi/10.1063/5.0036366</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/5.0036366" target="_blank" >10.1063/5.0036366</a>
Alternative languages
Result language
angličtina
Original language name
Defect structures in (001) zincblende GaN/3C-SiC nucleation layers
Original language description
The defect structure of zincblende GaN nucleation layers grown by metalorganic vapor-phase epitaxy on 3C-SiC/Si (001) was investigated by high-resolution scanning transmission electron microscopy. Perfect dislocations, partial dislocations, and stacking faults are present in the layers. Perfect dislocations are identified as 60° mixed-type and act as misfit dislocations to relieve the compressive lattice mismatch strain in GaN. Stacking faults are mainly bounded by 30° Shockley partial dislocations and rarely by Lomer–Cottrell partial dislocations, both of which are able to relieve the compressive lattice mismatch strain in the layer. We propose that the stacking faults and their partial dislocations originate from the dissociation of perfect dislocations present in the zincblende GaN layer and by direct nucleation of partial dislocations loops from the surface. These are the two main mechanisms that lead to the final defect structure of the zincblende GaN nucleation layers.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/EF16_027%2F0008056" target="_blank" >EF16_027/0008056: International mobility of junior researchers of IPM</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
1089-7550
Volume of the periodical
129
Issue of the periodical within the volume
15
Country of publishing house
US - UNITED STATES
Number of pages
11
Pages from-to
155306
UT code for WoS article
000641873500002
EID of the result in the Scopus database
2-s2.0-85104562025