Diffuse x-ray scattering from stacking faults in a-plane GaN epitaxiallayers

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10103778" target="_blank" >RIV/00216208:11320/11:10103778 - isvavai.cz</a>
Result on the web
<a href="http://prb.aps.org/abstract/PRB/v84/i9/e094113" target="_blank" >http://prb.aps.org/abstract/PRB/v84/i9/e094113</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.84.094113" target="_blank" >10.1103/PhysRevB.84.094113</a>

Result language
angličtina
Original language name
Diffuse x-ray scattering from stacking faults in a-plane GaN epitaxiallayers
Original language description
Diffuse x-ray scattering from various types of stacking faults in basal (0001) planes in a-oriented wurtzite GaN epitaxial layers is described theoretically and the calculated intensity distributions are compared with experimental data. From the comparison, the densities of stacking faults in a series of a-GaN samples were determined. The method makes it possible to discriminate the diffuse scattering from stacking faults from the influence of nonplanar defects like dislocations.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical
Physical Review B - Condensed Matter and Materials Physics
ISSN
1098-0121
e-ISSN
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Volume of the periodical
84
Issue of the periodical within the volume
9
Country of publishing house
US - UNITED STATES
Number of pages
8
Pages from-to
1-8
UT code for WoS article
000295161900001
EID of the result in the Scopus database
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