Observation of individual stacking faults in GaN microcrystals by x-ray nanodiffraction

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F17%3A10363418" target="_blank" >RIV/00216208:11320/17:10363418 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.4978870" target="_blank" >http://dx.doi.org/10.1063/1.4978870</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4978870" target="_blank" >10.1063/1.4978870</a>

Result language
angličtina
Original language name
Observation of individual stacking faults in GaN microcrystals by x-ray nanodiffraction
Original language description
X-ray nanodiffraction was used for the investigation of basal stacking faults in a-GaN microcrystallites. The method made it possible to find the positions of individual stacking faults in a chosen crystallite, and the resulting positions were compared with the observation of individual faults by electron channeling contrast in scanning electron microscopy. The x-ray diffraction data revealed that the faults occur in closely positioned pairs; the stacking faults in a pair have opposite displacement vectors. Published by AIP Publishing.
Czech name
—
Czech description
—

Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)