Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (11(2)over-bar2) GaN layers grown from the sidewall of an r-patterned sapphire substrate

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10140011" target="_blank" >RIV/00216208:11320/13:10140011 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1107/S0021889813020438" target="_blank" >http://dx.doi.org/10.1107/S0021889813020438</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1107/S0021889813020438" target="_blank" >10.1107/S0021889813020438</a>

Result language

angličtina

Original language name

Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (11(2)over-bar2) GaN layers grown from the sidewall of an r-patterned sapphire substrate

Original language description

Three-dimensional reciprocal space mapping of semipolar (11 (2) over bar2) GaN grown on stripe-patterned r-plane (1 (1) over bar 02) sapphire substrates is found to be a powerful and crucial method for the analysis of diffuse scattering originating fromstacking faults that are diffracting in a noncoplanar geometry. Additionally, by measuring three-dimensional reciprocal space maps (3D-RSMs) of several reflections, the transmission electron microscopy visibility criteria could be confirmed. Furthermore,similar to cathodoluminescence, the 3D-RSM method could be used in future as a reliable tool to distinguish clearly between the diffuse scattering signals coming from prismatic and from basal plane stacking faults and from partial dislocations in semipolar (11 (2) over bar2) GaN. The fitting of the diffuse scattering intensity profile along the stacking fault streaks with a simulation based on the Monte Carlo approach has delivered an accurate determination of the basal plane stacking f

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2013

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Applied Crystallography

ISSN

0021-8898

e-ISSN

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Volume of the periodical

46

Issue of the periodical within the volume

July

Country of publishing house

DK - DENMARK

Number of pages

9

Pages from-to

1425-1433

UT code for WoS article

000324764500022

EID of the result in the Scopus database

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