Morphology and structural investigation of silicon carbide layers formated by sublimation

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU98332" target="_blank" >RIV/00216305:26220/12:PU98332 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Morphology and structural investigation of silicon carbide layers formated by sublimation
Original language description
Thin films of silicon carbide (SiC) were grown by sublimation epitaxy in vacuum on the 6H-SiC substrates. Structural properties of the initial substrates and the epilayers were studied by both electron-diffraction and X-ray diffraction methods. Electron-diffraction measurement gives the confirmation of the crystallinity of obtained layers. Experimental results show that a lattice per-fection of epilayer is equal to that of monocrystalline substrate. These results are also validated by scanning probe microscopy. So, this technology of fabrication of SiC thin films allows carry out a treatment of initial substrate defects in dependence of the process conditions.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the 18th Conference STUDENT EEICT, vol. 3
ISBN
978-80-214-4462-1
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
239-243
Publisher name
LITERA Brno, Tabor 43a, 612 00 Brno
Place of publication
Brno
Event location
Brno
Event date
Apr 26, 2012
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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