Formation and study of SiC and AlN epilayers

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU99139" target="_blank" >RIV/00216305:26220/12:PU99139 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—

Result language
angličtina
Original language name
Formation and study of SiC and AlN epilayers
Original language description
This paper describes formation process and study of silicon carbide and aluminum nitride thin layers which are the advanced materials for high temperatures electronics. Sublimation epitaxy and ion-plasma method were used. Monocrystalline SiC plates of 6Hpolytypic were used for formation of SiC epilayers. Formation of AlN epilayers is labored because of absence of its own substrates and epitaxial deposition is made by heteroepitaxy on foreign substrates of other materials. Films of AlN were obtained byion-plasma method on the sapphire substrates. Obtained layers are investigated by X-ray diffractometry, electron diffraction and atomic force microscopy.
Czech name
—
Czech description
—

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings.
ISBN
978-80-214-4539-0
ISSN
—
e-ISSN
—
Number of pages
5
Pages from-to
111-115
Publisher name
Vysoke uceni technicke v Brne
Place of publication
LITERA, Tabor 43a, 61200 Brno
Event location
Brno
Event date
Jun 28, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—

Similar results(10)