Scanning electron microscopy of the thin layers of silicon carbide-aluminum nitride solid solution formatted by sublimation epitaxy

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU100264" target="_blank" >RIV/00216305:26220/12:PU100264 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Scanning electron microscopy of the thin layers of silicon carbide-aluminum nitride solid solution formatted by sublimation epitaxy
Original language description
The purpose of the study is formation and investigation of SiC/(SiC)1-x(AlN)x structure by scanning electron microscopy and atomic force microscopy. Sublimation epitaxy of the policrystalline sourse of (SiC)1-x(AlN)x was used. The optimal conditions of sublimation process are defined. These structures could be used as substrate for desing of semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, it also can be uses for production of transistors withhigh mobility of electrons and also for creation of blue and ultraviolet lith emmiters, in light-emmited diodes and laser diodes.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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