Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU103765" target="_blank" >RIV/00216305:26220/13:PU103765 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1051/epjconf/20134800002" target="_blank" >http://dx.doi.org/10.1051/epjconf/20134800002</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1051/epjconf/20134800002" target="_blank" >10.1051/epjconf/20134800002</a>
Alternative languages
Result language
angličtina
Original language name
Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy
Original language description
The objective of the study is a growth of SiC/(SiC)1-x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1-x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For thatpurpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes). The result of analysis shows that increasing of the growth temperature up to 2300 K llows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GAP102%2F11%2F0995" target="_blank" >GAP102/11/0995: Electron transport, Noise and Diagnostic of Shottky and Autoemission Cathodes</a><br>
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
EPJ Web of Conferences
ISSN
2100-014X
e-ISSN
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Volume of the periodical
48
Issue of the periodical within the volume
48
Country of publishing house
FR - FRANCE
Number of pages
4
Pages from-to
"00002.1"-"0002.4"
UT code for WoS article
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EID of the result in the Scopus database
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