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Theoretical and Experimental Investigation of SiC Thin Films Surface

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU100610" target="_blank" >RIV/00216305:26220/12:PU100610 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Theoretical and Experimental Investigation of SiC Thin Films Surface

  • Original language description

    This study describes morphology and structure of SiC thin films which are grown up by sublimation epitaxy in vacuum on the 6H-SiC substrates with thickness from tens of nanometers up to units of micrometers. Fashioned films are quite uniform in surface and volume. The crystal properties of the wafers and epitaxial layers are studied by electron diffraction investigation, X-ray techniques, and scanning probe microscopy. X-ray rocking curves show that structural perfection of SiC films is comparable withthe structural perfection of monocrystalline 6H-SiC substrates. Calculated lattice parameters of epilayer by X-ray diffractometry also match with known values for 6H-SiC. Electron-diffraction measurement gives the confirmation of the crystallinity of theobtained layers and it is also proved by scanning probe microscopy. This technology allows making of defect treatment of the wafer in dependence on epitaxial conditions. Fundamental analysis in this field allows optimize conditions of th

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2012

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    ElectroScope - http://www.electroscope.zcu.cz

  • ISSN

    1802-4564

  • e-ISSN

  • Volume of the periodical

    2012

  • Issue of the periodical within the volume

    5

  • Country of publishing house

    CZ - CZECH REPUBLIC

  • Number of pages

    5

  • Pages from-to

    1-5

  • UT code for WoS article

  • EID of the result in the Scopus database