Extended cavity semiconductor lasers in fundamental metrology.

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F02%3A12020159" target="_blank" >RIV/68081731:_____/02:12020159 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Extended cavity semiconductor lasers in fundamental metrology.
Original language description
We present the design of several types of extended-cavity lasers (ECL) based on the Littman.sup.1./sup. configuration and an arrangement for an external stabilizating scheme employing Doppler-free saturation spectroscopy in the molecular iodine. The ECLsfollowed the requirements of metrological applications where the stress has been put to mechanical stability, thermal control, narrow linewidth and a mode-hop free tuning range. We developed the thechnique of antireflection coatings of the laser diodesfront facets which proved to be a crucial step towards the internal cavity suppression and propper operation to the ECL. To control the laser optical frequency an electronics consisting of a precise thermal control and a current source with a protectivecircuitry was designed.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of SPIE - The International society for optical engineering.
ISBN
0-8194-4686-6
ISSN
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e-ISSN
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Number of pages
7
Pages from-to
132-138
Publisher name
SPIE
Place of publication
Novosibirsk
Event location
Novosibirsk [RU]
Event date
Sep 9, 2002
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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