Imaging of SiCN thin films on silicon substrate in the scanning low energy electron microscope

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F12%3A00386447" target="_blank" >RIV/68081731:_____/12:00386447 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Imaging of SiCN thin films on silicon substrate in the scanning low energy electron microscope
Original language description
The Si-C-N materials have been attracting growing interest due to their excellent physical properties. They are hard, possess a large band gap, resist harsh and high temperature environments, and exhibit interesting nanostrucrures such as turbosrtatic-carbon and nanopores. Their range of application includes anti-erosive turbines and cutting tools, opto-electronic materials, sensors and special drug delivery pharamaceutical products. Most of their interesting properties stems from carbon-nitrogen bonds.Hence, Si-C-N materials with a high content of carbon and nitrogen are of interest. Up to date, the highest carbon and nitrogen content could be synthesised in SiC2N4 and Si2CN4. Both chemical compositions are stable and possess the highest achieved carbon-nitrogen bond. Two different nitride bonding configuration was measured to be present.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Physic and Nanoscale. (Proceedings of the 10th IUVSTA International Summer School )
ISBN
978-80-260-0619-0
ISSN
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e-ISSN
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Number of pages
1
Pages from-to
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Publisher name
IOP AS CR
Place of publication
Praha
Event location
Devět skal
Event date
May 30, 2012
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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