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Functional nano-structuring of thin silicon nitride membranes

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F20%3A00525191" target="_blank" >RIV/68081731:_____/20:00525191 - isvavai.cz</a>

  • Result on the web

    <a href="https://content.sciendo.com/view/journals/jee/71/2/article-p127.xml" target="_blank" >https://content.sciendo.com/view/journals/jee/71/2/article-p127.xml</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.2478/jee-2020-0019" target="_blank" >10.2478/jee-2020-0019</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Functional nano-structuring of thin silicon nitride membranes

  • Original language description

    The paper describes the development and production of a nano-optical device consisting of a nano-perforated layer of silicon nitride stretched in a single-crystal silicon frame using electron beam lithography (EBL) and reactive ion etching (RIE) techniques. Procedures for transferring nanostructures to the nitride layer are described, starting with the preparation of a metallic mask layer by physical vapor deposition (PVD), high-resolution pattern recording technique using EBL and the transfer of the motif into the functional layer using the RIE technique. Theoretical aspects are summarized including technological issues, achieved results and application potential of patterned silicon nitride membranes.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    21002 - Nano-processes (applications on nano-scale); (biomaterials to be 2.9)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2020

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Electrical Engineering - Elektrotechnický časopis

  • ISSN

    1335-3632

  • e-ISSN

  • Volume of the periodical

    71

  • Issue of the periodical within the volume

    2

  • Country of publishing house

    SK - SLOVAKIA

  • Number of pages

    4

  • Pages from-to

    127-130

  • UT code for WoS article

    000536287900009

  • EID of the result in the Scopus database

    2-s2.0-85085758550